• Fast response time
• High analytic
• Cut-off visible wavelength λp=940nm
• High sensitivity
• This product itself will remain within RoHS compliant version

It consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IRED only. This is the normal situation. But when an object is in between, phototransistor could not receives the radiation.